Fabricant | No de pièce | Fiches technique | Description |
International Rectifier
|
IRGPS4067DPBF |
270Kb/10P |
Low VCE (on) Trench IGBT Technology |
IRGI4056DPBF |
421Kb/10P |
Low VCE (ON) trench IGBT technology |
IRG7PH42UD2PBF |
349Kb/10P |
Low VCE (ON) Trench IGBT Technology |
GB35XF120K |
325Kb/9P |
Low VCE (on) Non Punch Through IGBT Technology |
IRGI4090PBF |
377Kb/7P |
IRGI4090PbF Low VCE(on) and Energy per Pulse (EPULSE |
IRGBF20F |
255Kb/6P |
INSULATED GATE BIPOLAR TRANSISTOR(Vce=900V, @Vge=15V, Ic=5.3A) |
IRG4PC20UPBF |
693Kb/8P |
UltraFast Speed 1GBT (VCES=600V , VCE(on)typ.=1.85V , @VGE=15V , Ic=6.5A ) |
IRG4BH20K-LPBF |
298Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR ( VCES=1200V , VCE(on)typ.=3.17V , @VGE=15V.Ic=5.0A ) |
IRG4BC30FDPBF |
3Mb/11P |
Fast CoPack 1GBT ( VCES = 600V , VCE(on)typ. = 1.59V , VGE = 15V , IC = 17A ) |
IRG4PC30F |
145Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) |
IRG4PC40W |
116Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A) |
IRG4PH50K |
92Kb/6P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A) |
IRG4PSC71U |
151Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.67V, @Vge=15V, Ic=60A) |
IRG4BC30K |
137Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) |
IRG4BC30U |
167Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A) |
IRG4BC20U |
167Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A) |
IRG4BC30W |
139Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) |
IRG4BC40U |
169Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A) |
IRG4PC40U |
148Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A) |
IRG4PC50F |
146Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) |