RATED Datasheet(PDF) - PHP3N60E - NXP Semiconductors

Fabricant	No de pièce	Fiches technique	Description
NXP Semiconductors	PHP3N60E	79Kb/9P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.200
	PHP11N50E	41Kb/7P	PowerMOS transistors Avalanche energy rated January 1998 Rev 1.000
	PHP7N40E	78Kb/9P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.200
	PHX10N40E	74Kb/8P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.200
	PHX3N60E	73Kb/8P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.200
	PHX8N50E	74Kb/8P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.300
	PHP9N60E	41Kb/7P	PowerMOS transistors Avalanche energy rated January 1998 Rev 1.000
	PHP2N50E	75Kb/10P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.200
	PHP2N60E	94Kb/10P	PowerMOS transistors Avalanche energy rated August 1998 Rev 1.100
	PHP4N40E	78Kb/9P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.200
	PHP4N60E	80Kb/9P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.200
	PHB11N50E	102Kb/9P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.000
	IRF730	59Kb/7P	PowerMOS transistor Avalanche energy rated March 1999 Rev 1.000
	IRF840	60Kb/7P	PowerMOS transistor Avalanche energy rated March 1999 Rev 1.000
	IRFP460	94Kb/7P	PowerMOS transistors Avalanche energy rated September 1999 Rev 1.000
	PHP10N40E	115Kb/7P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.000
	PHX4N60E	75Kb/8P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.200
	PHP6N60E	74Kb/9P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.300
	PHP7N60E	91Kb/10P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.400
	PHX2N60E	65Kb/8P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.200

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