Fabricant | No de pièce | Fiches technique | Description |
M.S. Kennedy Corporatio...
|
MSK0002 |
135Kb/5P |
High Input Impedance-180K Min |
CONEC Elektronische Bau...
|
6STD09SCT99S40X |
209Kb/3P |
METALSHELLS:COPPER ALLOY;MIN. 320u TIN |
6STD09PCM99B30X |
98Kb/1P |
METALSHELLS:COPPER ALLOY;MIN. 320u TIN |
6STD09SCM99B30X |
99Kb/1P |
METALSHELLS:COPPER ALLOY;MIN. 320u TIN |
303W3CSXX56N40X |
100Kb/1P |
METALSHELLS STEEL MIN. 320u TIN |
JMK Inc.
|
AA-2069-1 |
42Kb/1P |
1500 Vdc for 1.0 Min |
PHOENIX CONTACT
|
1212512 |
45Kb/2P |
Adapter - SAC BIT MIN-D25 |
Analog Microelectronics
|
DFN-10B |
52Kb/1P |
(3x3x0.75mm) MIN 0.700 MAX 0.800 |
List of Unclassifed Man...
|
STK040 |
111Kb/1P |
10,15,20W MIN AF POWER AMP |
Analog Microelectronics
|
QFN-16B |
32Kb/1P |
(4x4x0.75mm) MIN 0.700 MAX 0.800 |
QFN-16C |
34Kb/1P |
(3x3x0.75mm) MIN 0.700 MAX 0.800 |
Major League Electronic...
|
BLSMBC-1-S |
146Kb/1P |
3.0 Ampere, 1000M Ohms Min. |
Solid State Optronic
|
S942 |
248Kb/7P |
High Blocking Voltage (800V MIN) |
Samsung semiconductor
|
TIP105 |
262Kb/6P |
PNP (HIGH DC CURRENT GAIN MIN |
KR Electronics, Inc.
|
3232-N |
57Kb/3P |
125 MHz min 1 dB Bandwidth |
Toshiba Semiconductor
|
TLP2301 |
307Kb/11P |
Collector-emitter voltage - 40 V (min) |
Guangdong Youtai Semico...
|
TLP185GB-S |
1Mb/8P |
Collector-emitter voltage: 80 V (min) |
Aplus Intergrated Circu...
|
APR6016 |
570Kb/24P |
16 min Recording & Playback Voice IC |
E-SWITCH
|
N470000 |
109Kb/1P |
INSULATION RESISTANCE: 100 MOHMS MIN @ 100VDC. |
M.S. Kennedy Corporatio...
|
MSK801 |
365Kb/6P |
10 MHz full power bandwidth min. |