Fabricant | No de pièce | Fiches technique | Description |
Infineon Technologies A...
|
BBY5603WE6327 |
855Kb/7P |
Excellent linearity 2011-06-15 |
BFR380F |
652Kb/10P |
High linearity low noise driver amplifier 2013-11-06 |
BFQ790 |
491Kb/23P |
High Linearity RF Medium Power Amplifier Revision 2.0 2017-02-16 |
BGA771L16 |
942Kb/33P |
High Linearity Dual-Band UMTS LNA V3.0, August 2008 |
BFP450H6327 |
1Mb/28P |
High Linearity Silicon Bipolar RF Transistor Revision 1.1, 2012-09-11 |
BGS12PN10 |
2Mb/17P |
SPDT high linearity, high power RF Switch Revision 1.2 - 2016-07-07 |
BGS13PN10 |
2Mb/15P |
SP3T high linearity, high power RF Switch Revision 1.0 - 2016-09-27 |
BGS14PN10 |
2Mb/16P |
SP4T high linearity, high power RF Switch Revision 1.3 - 2016-08-24 |
BFP650H6327 |
1Mb/29P |
High Linearity Silicon Germanium Bipolar RF Transistor Revision 1.1, 2012-09-13 |
BFP750 |
1Mb/27P |
High Linearity Low Noise SiGe:C NPN RF Transistor Revision 1.0, 2010-10-22 |
BFP650 |
1Mb/27P |
High Linearity Low Noise SiGe:C NPN RF Transistor Revision 1.0, 2010-10-22 |
BFP450 |
1Mb/27P |
High Linearity Low Noise Si NPN RF Transistor Revision 1.0, 2010-10-22 |
BFP750 |
1Mb/29P |
High Linearity Low Noise SiGe:C NPN RF Transistor Revision 1.1, 2015-01-14 |
BGS14MPA9 |
540Kb/18P |
High Linearity, High Power SP4T RF Switch with MIPI 2.0 Revision 2.1 2018-11-21 |
BFQ790 |
1Mb/30P |
High Linearity High Gain 1/2 Watt RF Driver Amplifier Revision 2.0, 2014-08-26 |
BGA771N16 |
1Mb/33P |
High Linearity Dual-Band UMTS LNA (1900/1800/2100, 800/900MHz) Revision 3.1, 2010-03-16 |
BGA748N16 |
2Mb/31P |
High Linearity Quad-Band UMTS LNA (2100, 1900, 900, 800 MHz) Revision 3.0, 2010-11-08 |
BGA748L16 |
2Mb/31P |
High Linearity Quad-Band UMTS LNA (2100, 1900, 900, 800 MHz) Revision 3.2, 2010-06-18 |
BGA735N16 |
2Mb/33P |
High Linearity Tri-Band LTE/UMTS LNA (2600/2300/2100, 1900/1800, 900/800/700 MHz) Revision 3.8, 2010-12-23 |