Fabricant | No de pièce | Fiches technique | Description |
Siemens Semiconductor G...
|
BAS125-07W |
33Kb/4P |
Silicon Schottky Diode (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
BAS125 |
104Kb/5P |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
BAS125W |
106Kb/5P |
Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) |
BAR80 |
68Kb/4P |
Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) |
BAT64-07W |
34Kb/3P |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
BAT64-07 |
88Kb/4P |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
BAT64 |
91Kb/3P |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
BAT64-W |
69Kb/6P |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
BAR81W |
30Kb/4P |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
BAR81 |
46Kb/3P |
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |