GHZ Datasheet(PDF) - PMB2330 - Siemens Semiconductor Group

Moteur de recherche de fiches techniques de composants électroniques

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GHZ Fiches technique, PDF

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Mot-clé recherché : 'GHZ' - Totale: 60 (1/3) Pages

Fabricant	No de pièce	Fiches technique	Description
Siemens Semiconductor G...	PMB2330	175Kb/7P	2-GHz-Mixer
	TDA6130-5X4	177Kb/8P	2-GHz MIXER
	PMB2313T	218Kb/19P	Prescaler Circuit 1.1 GHz
	PMB2314-T	160Kb/14P	Prescaler Circuit 2.1 GHz PMB 2314T
	SDA3202	462Kb/10P	1.3 GHZ PLL WITH I2C BUS
	CFY30	46Kb/6P	GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)
	BGA310	20Kb/4P	Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
	MGP3006X	450Kb/21P	GHz PLL with I2C Bus and Four Chip Addresses
	MGP3006X6	444Kb/21P	GHz PLL with I2C Bus and Four Chip Addresses
	SDA3302	864Kb/27P	GHz PLL with I2C Bus and Four Chip Addresses
	BFQ60	121Kb/5P	LOW NOISE NPN SILICON MICROVAVE TRANSISTOR UP TO 2 GHz
	BGA312	20Kb/4P	Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
	BGA318	20Kb/4P	Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz)
	BAT62-07W	33Kb/4P	Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)
	BAT62-02W	26Kb/4P	Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)
	BAT62	79Kb/3P	Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies.)
	BAT62-03W	39Kb/4P	Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies)
	CLY2	51Kb/7P	GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz)
	BXY43A	19Kb/2P	Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter)
	BFP405	49Kb/8P	NPN Silicon RF Transistor (For low current applications For oscillators up to 12 GHz)

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