Moteur de recherche de fiches techniques de composants électroniques |
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GALLIUM Fiches technique, PDF |
Mot-clé recherché : 'GALLIUM' - Totale: 238 (7/12) Pages |
Fabricant | No de pièce | Fiches technique | Description |
Agilent(Hewlett-Packard... |
ATF-44101 |
65Kb/3P |
2-8 GHz Medium Power Gallium Arsenide FET |
M/A-COM Technology Solu... |
NPT2020 |
1Mb/8P |
Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT |
NPT2021-DC-2P2GHZ-50W |
951Kb/4P |
Gallium Nitride 48V, 50W, DC-2.2 GHz HEMT | |
Freescale Semiconductor... |
MRFG35010MT1 |
516Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor |
NXP Semiconductors |
MRFG35010A |
490Kb/18P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor Rev. 2, 12/2008 |
Freescale Semiconductor... |
MRFG35003M6T1 |
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor |
Agilent(Hewlett-Packard... |
ATF-10236 |
47Kb/3P |
0.5-12 GHz Low Noise Gallium Arsenide FET |
ATF-13336 |
46Kb/3P |
2-16 GHz Low Noise Gallium Arsenide FET | |
M/A-COM Technology Solu... |
NPT1015 |
2Mb/10P |
Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT |
Clairex Technologies, I... |
CLE300F |
104Kb/1P |
Aluminum Gallium Arsenide IRED Flat Lead PLCC Package |
Freescale Semiconductor... |
MRFG35003ANT1 |
473Kb/18P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor |
MRFG35005MT1 |
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor | |
MRFG35002N6AT1 |
187Kb/11P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor | |
Nexperia B.V. All right... |
GAN063-650WSA |
287Kb/11P |
650 V, 50 mΩ Gallium Nitride (GaN) FET 20 March 2020 |
Agilent(Hewlett-Packard... |
ATF-26884 |
44Kb/4P |
2-16 GHz General Purpose Gallium Arsenide FET |
ATF-46101 |
44Kb/3P |
2-10 GHz Medium Power Gallium Arsenide FET | |
ATF-46171 |
43Kb/3P |
2-10 GHz Medium Power Gallium Arsenide FET | |
Clairex Technologies, I... |
CLE250 |
113Kb/1P |
Aluminum Gallium Arsenide IRED Miniature Hermetic Sealed Package |
Freescale Semiconductor... |
MRFG35010NT1 |
173Kb/10P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor |
MRFG35010R1 |
373Kb/11P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor |
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