Fabricant | No de pièce | Fiches technique | Description |
Siemens Semiconductor G...
|
B25667-A2157-A375 |
565Kb/31P |
Compact design Enhanced inrush current withstand capability |
BBY33BB-2 |
18Kb/2P |
Silicon Tuning Varactor (Tuning varactor in passivated Mesa technology epitaxial design) |
PMB2331 |
556Kb/21P |
The mixer used in this design is a general purpose up-/downconversion gilbert cell mixer |
BAR80 |
68Kb/4P |
Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) |
BB833 |
24Kb/2P |
Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units) |
BB811 |
26Kb/2P |
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz; special design for use in TV-sat indoor units) |
BB835 |
24Kb/2P |
Silicon Tuning Diode (Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units) |
BB837 |
43Kb/3P |
Silicon Tuning Diode (Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units) |
BB831 |
63Kb/3P |
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz special design for use in TV-sat indoor units) |
BAR81 |
46Kb/3P |
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
BAR81W |
30Kb/4P |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |