| Fabricant | No de pièce | Fiches technique | Description |
IP SEMICONDUCTOR CO., L...
|
IPT04Q08-TED |
228Kb/5P |
High current density due to double mesa technology |
| IPT08Q08-CEA |
214Kb/4P |
High current density due to double mesa technology |
| IPT0408-05I |
230Kb/4P |
High current density due to double mesa technology |
| IPT12Q08-CEF |
235Kb/4P |
High current density due to double mesa technology |
| IPT20Q06-TEA |
208Kb/4P |
High current density due to double mesa technology |
| IPT20Q08-TEA |
208Kb/4P |
High current density due to double mesa technology |
| IPT08Q08-CED |
215Kb/5P |
High current density due to double mesa technology |
| IPT0406-18F |
432Kb/4P |
High current density due to double mesa technology |
| IPT0408-05D |
228Kb/5P |
High current density due to double mesa technology |
| IPT0406-05A |
226Kb/4P |
High current density due to double mesa technology |
| IPT2508-BEA |
214Kb/4P |
High current density due to double mesa technology |
| IPT4006-XXH |
211Kb/4P |
High current density due to double mesa technology |
| IPT04Q06-TEI |
230Kb/4P |
High current density due to double mesa technology |
| IPT08Q06-CEI |
218Kb/4P |
High current density due to double mesa technology |
| IPT0406-05D |
228Kb/5P |
High current density due to double mesa technology |
| IPT0408-18F |
432Kb/4P |
High current density due to double mesa technology |
| IPT0806-SEB |
216Kb/4P |
High current density due to double mesa technology |
| IPT0806-SED |
217Kb/5P |
High current density due to double mesa technology |
| IPT0808-SEB |
216Kb/4P |
High current density due to double mesa technology |
| IPT12Q06-CEB |
223Kb/4P |
High current density due to double mesa technology |
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