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DENSITY Fiches technique, PDF

Mot-clé recherché : 'DENSITY' - Totale: 43 (1/3) Pages
FabricantNo de pièceFiches techniqueDescription
Company Logo Img
Stanson Technology
ST002 Datasheet pdf image
721Kb/7P
This high-density process is especially tailored to minimize on-state resistance
STC6332 Datasheet pdf image
421Kb/9P
The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
ST2319SRG Datasheet pdf image
229Kb/8P
ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STP9434 Datasheet pdf image
314Kb/6P
STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
ST2318SRG Datasheet pdf image
221Kb/7P
ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STP4403 Datasheet pdf image
321Kb/6P
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
STP9235 Datasheet pdf image
331Kb/6P
STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
STN4392 Datasheet pdf image
383Kb/7P
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4480 Datasheet pdf image
742Kb/6P
STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4850 Datasheet pdf image
532Kb/6P
STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN1810 Datasheet pdf image
966Kb/7P
STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4438 Datasheet pdf image
269Kb/6P
STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4546 Datasheet pdf image
363Kb/6P
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP4435A Datasheet pdf image
311Kb/6P
STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP4931 Datasheet pdf image
334Kb/6P
STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
ST3422A Datasheet pdf image
338Kb/6P
The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STN4346 Datasheet pdf image
352Kb/7P
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4426 Datasheet pdf image
362Kb/6P
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP6308 Datasheet pdf image
420Kb/6P
STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST3407SRG Datasheet pdf image
184Kb/6P
ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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