Fabricant | No de pièce | Fiches technique | Description |
NXP Semiconductors
|
BYW54 |
46Kb/7P |
Controlled avalanche rectifiers 1996 Oct 03 |
BAS11 |
42Kb/7P |
Controlled avalanche rectifiers 1996 Sep 26 |
1N5059 |
74Kb/7P |
Controlled avalanche rectifiers 1996 Jun 19 |
BY527 |
46Kb/7P |
Controlled avalanche rectifier 1996 Jun 11 |
BYM56 |
48Kb/7P |
Controlled avalanche rectifiers 1996 May 24 |
BYD11 |
46Kb/7P |
Controlled avalanche rectifiers 1996 Sep 26 |
BYG50 |
41Kb/6P |
Controlled avalanche rectifiers 1996 May 24 |
BYD12 |
49Kb/8P |
Controlled avalanche rectifiers 1998 Dec 03 |
BYD13 |
39Kb/7P |
Controlled avalanche rectifiers 1996 May 24 |
BAX12 |
39Kb/8P |
Controlled avalanche diode 1996 Sep 17 |
S1 |
59Kb/12P |
SMA controlled avalanche rectifiers 2000 Feb 14 |
PHP3N60E |
79Kb/9P |
PowerMOS transistors Avalanche energy rated December 1998 Rev 1.200 |
PHP11N50E |
41Kb/7P |
PowerMOS transistors Avalanche energy rated January 1998 Rev 1.000 |
PHP7N40E |
78Kb/9P |
PowerMOS transistors Avalanche energy rated December 1998 Rev 1.200 |
PHX10N40E |
74Kb/8P |
PowerMOS transistors Avalanche energy rated December 1998 Rev 1.200 |
PHX3N60E |
73Kb/8P |
PowerMOS transistors Avalanche energy rated December 1998 Rev 1.200 |
PHX8N50E |
74Kb/8P |
PowerMOS transistors Avalanche energy rated December 1998 Rev 1.300 |
PHP6N60E |
74Kb/9P |
PowerMOS transistors Avalanche energy rated December 1998 Rev 1.300 |
PHP7N60E |
91Kb/10P |
PowerMOS transistors Avalanche energy rated December 1998 Rev 1.400 |
PHX2N60E |
65Kb/8P |
PowerMOS transistors Avalanche energy rated December 1998 Rev 1.200 |