Fabricant | No de pièce | Fiches technique | Description |
Shenzhen Huazhimei Semi...
|
HM7N60K |
672Kb/8P |
600V N-Channel MOSFET |
HMS10N60K |
985Kb/7P |
600V N-Channel MOSFET |
HM7N60 |
330Kb/8P |
600V N-Channel MOSFET |
HM12N60 |
333Kb/8P |
600V N-Channel MOSFET |
HM10N60 |
351Kb/8P |
600V N-Channel MOSFET |
HMS11N60K |
688Kb/7P |
600V N-Channel MOSFET |
HMG60N60A |
902Kb/7P |
600V insulated gate bipolar transistor |
HMG20N60A |
633Kb/5P |
20A, 600V insulated gate bipolar transistor |
HMG15N60D |
1Mb/8P |
600V, 15A, Trench FS II IGBT |
HMG40N60A |
750Kb/5P |
40A, 600V insulated gate bipolar transistor |
HMG40N60T |
1Mb/6P |
600V, 40A, Trench FS II IGBT |