Fabricant | No de pièce | Fiches technique | Description |
Leshan Radio Company
|
S-LP3407LT1G |
476Kb/6P |
30V P-Channel Enhancement-Mode MOSFET VDS = -30V |
LPB3408LT1G |
525Kb/5P |
30V P-Channel (D-S) MOSFET VDS = -30V |
LN2306ELT1G |
715Kb/5P |
N-Channel 30V(D-S) MOSFET VDS= 30V |
LP3401ALT1G |
852Kb/3P |
P-Channel 30V( D - S) MOSFET VDS =-30V |
LP3419DT2AG |
142Kb/3P |
30V P-Channel Power MOSFET |
LN3424DT2AG |
1Mb/6P |
30V N-Channel Enhancement MOSFET |
LN3420DT2AG |
745Kb/6P |
30V N-Channel Enhancement MOSFET |
S-LN3424DT2AG |
806Kb/6P |
30V N-Channel Enhancement MOSFET |
LP3407BLT1G |
1,009Kb/3P |
30V P-Channel Enhancement-Mode MOSFET |
LPB3407LT1G |
731Kb/6P |
30V P-Channel Enhancement-Mode MOSFET |
LP2305LT1G |
248Kb/4P |
30V P-Channel Enhancement-Mode MOSFET |
LN2506DT1G |
1Mb/5P |
30V N-Channel Enhancement-Mode MOSFET |
LNA2306LT1G |
438Kb/5P |
30V N-Channel Enhancement-Mode MOSFET |
LN2306LT1G |
825Kb/4P |
30V N-Channel Enhancement-Mode MOSFET |
LN4812LT1G |
292Kb/4P |
30V N-Channel Enhancement-Mode MOSFET |
LPA2305LT1G |
623Kb/4P |
30V P-Channel Enhancement-Mode MOSFET |
LP3407LT1G |
1,003Kb/6P |
30V P-Channel Enhancement-Mode MOSFET |
LP9435LT1G |
416Kb/4P |
30V P-Channel Enhancement-Mode MOSFET |
LN2306LT1G |
456Kb/5P |
30V N-Channel Enhancement-Mode MOSFET |
LN4812LT1G |
670Kb/5P |
30V N-Channel Enhancement-Mode MOSFET |