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DIODE Fiches techniques, Datasheet

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Description trouvée : 'diode' - Totale: 35592 (1/1780) Page
FabricantNo de pièceVoirDescription

Littelfuse
DK208D This DK208D 8A, 1200V rated standard recovery rectifier diode in a compact TO-252 surface mount package is ideal as a bypass diode or anti-parallel diode for active switching component

Renesas Technology Corp
RJU60C6TDPP-EJ Single Diode Fast Recovery Diode

Siemens Semiconductor G...
BXY42 HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor PIN Diode for high speed switching of RF signals)

KEC(Korea Electronics)
KDV275E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)
KDV251M VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR CB,C/P PLL)

Renesas Technology Corp
RJS6004WDPK_15 600V - 20A - Diode SiC Schottky Barrier Diode

KEC(Korea Electronics)
E35A37VBS STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE)

Renesas Technology Corp
NX8346TS LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX6411GH LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION

Central Semiconductor C...
CPD82X_10 Schottky Diode High Current, Low VF Schottky Diode Chip

Renesas Technology Corp
RJU60C3TDPP-EJ_15 600V - 30A - Single Diode Fast Recovery Diode

KEC(Korea Electronics)
KDV239 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO)

Renesas Technology Corp
NX6350GP_15 LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
RJU6054TDPP-EJ_15 600V - 30A - Single Diode Ultra Fast Recovery Diode
RJU6054SDPK-M0 Single Diode Ultra Fast Recovery Diode
RJU60C6SDPK-M0 Single Diode Fast Recovery Diode

Central Semiconductor C...
CPD41_10 Switching Diode High Current Switching Diode Chip

ON Semiconductor
1SS351-TB-E Schottky Barrier Diode Dual Series Schottky Barrier Diode for Mixer and Detector 5V, 30mA, 0.69pF, CP

Renesas Technology Corp
RJU4351TDPP-EJ Single Diode Ultra Fast Recovery Diode

ON Semiconductor
NTLGF3402P Power MOSFET and Schottky Diode −20 V, −3.9 A FETKY, P−Channel, 2.0 A Schottky Barrier Diode, DFN6

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