Fabricant | No de pièce | Fiches technique | Description |
International Rectifier
|
IRGPS4067DPBF |
270Kb/10P |
Low VCE (on) Trench IGBT Technology |
IRGI4056DPBF |
421Kb/10P |
Low VCE (ON) trench IGBT technology |
IRG7PH42UD2PBF |
349Kb/10P |
Low VCE (ON) Trench IGBT Technology |
Vishay Siliconix
|
VS-GB300TH120U |
164Kb/7P |
VCE(on) with positive temperature coefficient Revision: 12-Jun-15 |
Infineon Technologies A...
|
AUIRGDC0250 |
443Kb/10P |
Low VCE (on) Planar IGBT Technology 2018-03-01 |
AUIRGPS4070D0 |
849Kb/11P |
Low VCE (on) Trench IGBT Technology 2016-12-12 |
International Rectifier
|
GB35XF120K |
325Kb/9P |
Low VCE (on) Non Punch Through IGBT Technology |
IRGI4090PBF |
377Kb/7P |
IRGI4090PbF Low VCE(on) and Energy per Pulse (EPULSE |
Vishay Siliconix
|
VS-GT250SA60S |
196Kb/9P |
Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A 01-Jan-2023 |
GA200SA60SP |
182Kb/9P |
Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A Revision: 22-Jul-10 |
VS-GA250SA60S |
288Kb/9P |
Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A Revision: 20-May-16 |
GA200SA60SP |
181Kb/9P |
Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A 02-Oct-12 |
VS-GT250SA60S |
196Kb/9P |
Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A 01-Jan-2022 |
MAKO SEMICONDUCTOR CO.,...
|
2SB1188 |
147Kb/2P |
Low VCE(sat). |
International Rectifier
|
IRG4PC20UPBF |
693Kb/8P |
UltraFast Speed 1GBT (VCES=600V , VCE(on)typ.=1.85V , @VGE=15V , Ic=6.5A ) |
IRG4BH20K-LPBF |
298Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR ( VCES=1200V , VCE(on)typ.=3.17V , @VGE=15V.Ic=5.0A ) |
IRG4BC30FDPBF |
3Mb/11P |
Fast CoPack 1GBT ( VCES = 600V , VCE(on)typ. = 1.59V , VGE = 15V , IC = 17A ) |
Guangdong Kexin Industr...
|
2SD2098 |
37Kb/1P |
Low VCE(sat) Transistor |
Nanjing International G...
|
2SD2098 |
451Kb/3P |
Low VCE(sat) Transistor |
International Rectifier
|
IRG4PC30F |
145Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) |