Fabricant | No de pièce | Fiches technique | Description |
Siemens Semiconductor G...
|
HYM364035S |
476Kb/10P |
4M x 36-Bit EDO-DRAM Module |
HYM364025S |
55Kb/10P |
4M x 36-Bit EDO - DRAM Module |
HYM364020S |
53Kb/10P |
4M x 36-Bit Dynamic RAM Module |
GSI Technology
|
GS8128036GT-250I |
347Kb/24P |
8M x 18, 4M x 32, 4M x 36 144Mb Sync Burst SRAMs |
GS8128036GT-200IV |
344Kb/23P |
8M x 18, 4M x 32, 4M x 36 144Mb Sync Burst SRAMs |
Cypress Semiconductor
|
CY7C1484V33 |
507Kb/29P |
2M x 36/4M x 18 Pipelined DCD SRAM |
GSI Technology
|
GS8128236GB-200IV |
455Kb/35P |
8M x 18, 4M x 36 144Mb S/DCD Sync Burst SRAMs |
Cypress Semiconductor
|
CY7C1484V25 |
1Mb/26P |
72-Mbit (2M x 36/4M x 18) Pipelined DCD Sync SRAM |
CY7C1481V33 |
638Kb/30P |
2M x 36/4M x 18/1M x 72 Flow-through SRAM |
CY7C1484V33 |
1Mb/26P |
72-Mbit (2M x 36/4M x 18) Pipelined DCD Sync SRAM |
GSI Technology
|
GS8128218GD-250I |
462Kb/37P |
8M x 18, 4M x 36 144Mb S/DCD Sync Burst SRAMs |
GS8128236GD-200IVV |
455Kb/35P |
8M x 18, 4M x 36 144Mb S/DCD Sync Burst SRAMs |
GS864418E-V |
1Mb/32P |
4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs |
GS8128218GB-250I |
462Kb/37P |
8M x 18, 4M x 36 144Mb S/DCD Sync Burst SRAMs |
GS8640V18T |
594Kb/23P |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
Samsung semiconductor
|
KMM5364005BSW |
393Kb/19P |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
Integrated Silicon Solu...
|
IS61LF204836B |
1Mb/34P |
2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
Samsung semiconductor
|
KMM5364003BSW |
351Kb/18P |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
KMM5364003CSW |
391Kb/20P |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
KMM5364005CSW |
415Kb/21P |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |