Moteur de recherche de fiches techniques de composants électroniques |
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2112 Fiches technique, PDF |
Mot-clé recherché : '2112' - Totale: 14 (1/1) Pages |
Fabricant | No de pièce | Fiches technique | Description |
STMicroelectronics |
NAND04GA3C2A |
504Kb/51P |
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory |
Numonyx B.V |
NAND08GW3C2B |
1Mb/60P |
8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory |
NAND04GW3B2B |
1Mb/58P |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories | |
STMicroelectronics |
NAND04GW3B2B |
501Kb/58P |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories |
NAND01G-B |
631Kb/64P |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory | |
NAND01G-B2B |
711Kb/62P |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory | |
Numonyx B.V |
NAND08GW3C2A |
1Mb/58P |
8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory |
NAND01G-B2B |
1Mb/60P |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory | |
NAND01GR3B2C |
1Mb/67P |
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory January 2010 Rev 5 |
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NAND02G-B2D |
1Mb/69P |
2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories | |
STMicroelectronics |
NAND512-B |
383Kb/59P |
512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory February 2005 |
NAND01G-N |
217Kb/23P |
1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package | |
Numonyx B.V |
NAND04G-B2D |
1Mb/69P |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories |
NXP Semiconductors |
68HC05P9A |
945Kb/90P |
The MC68HC05P9A is a 28-pin device based on the MC68HC05P9. The memory map includes 2112 bytes of user ROM and 128 bytes of RAM. December 18, 1995 REV 2.0 |
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