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DIODE Fiches techniques, Datasheet

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Description trouvée : 'diode' - Totale: 150 (1/8) Page
FabricantNo de pièceVoirDescription

California Eastern Labs
NX8349TS_16 LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX6352GP LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
NX6350EP LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
NX8349TS LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
NX8663JB-BC LASER DIODE 1 650nm InGaAsP MQW-DFB DC-PBH PULSED LASER DIODE MODULE FOR OTDR APPLICATION
NX8602BF-AA LASER DIODE 1 650 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
NX8369TB LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8369TB_16 LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8601BF-AA LASER DIODE 1 625 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
NX8349TB LASER DIODE 1 650 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
NX8369TS LASER DIODE 1 625 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
NX8349TB_16 LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX8369TS_16 LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NX6414EH LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE
NX8350TS LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
NX7527 NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE
NX5302SE NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS
NX7303BA-CC 1310 nm InGaAsP MQW FP LASER DIODE IN COAXIAL PACKAGE FOR 155 Mb/s APPLICATION
NX6306 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
NX6511GH LASER DIODE IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS

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