Fabricant | No de pièce | Fiches technique | Description |
RF Micro Devices
|
RF7206 |
576Kb/8P |
3 V W-CDMA BAND 2 LINEAR PA MODULE |
RF7401 |
531Kb/8P |
3 V W-CDMA BAND 1 LINEAR PA MODULE |
New Jersey Semi-Conduct...
|
Z130PA20A |
106Kb/1P |
PA Series |
TriQuint Semiconductor
|
QPA2705 |
715Kb/12P |
5 W, 28 V, 2.5 ??2.7 GHz GaN PA Module |
Qorvo, Inc
|
QPA4501 |
805Kb/12P |
3 W, 28 V, 4.4 ??5.0 GHz GaN PA Module |
TriQuint Semiconductor
|
QPA3503 |
1Mb/12P |
3 W, 28 V, 3.4 ??3.6 GHz GaN PA Module |
TQM616025 |
251Kb/1P |
WCDMA / HSUPA Band V/VI Tritium III PA Duplexer Module? |
TQM616025 |
251Kb/1P |
WCDMA / HSUPA Band V/VI Tritium III PA Duplexer Module |
Qorvo, Inc
|
QPA3503 |
682Kb/11P |
3 W, 28 V, 3.4 ??3.6 GHz GaN PA Module |
QPA4501 |
756Kb/12P |
3 W, 28 V, 4.4 ??5.0 GHz GaN PA Module Sep 8th, 2021 |
Analog Devices
|
ADG636 |
147Kb/12P |
1 pC Charge Injection, 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch REV. 0 |
ADG611 |
152Kb/12P |
1 pC Chanrge Injection, 100 pA Leakage, CMOS +-5 V/+5 V/+3 V Quad SPST Switches REV. 0 |
ADG604 |
155Kb/12P |
1 pC Charge Injection, 100 pA Leakage CMOS 짹5 V/5 V/3 V 4-Channel Multiplexer REV. 0 |
ADG611 |
361Kb/16P |
1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/+5 V/+3 V, Quad SPST Switches REV. A |
ADG636YRU-REEL |
498Kb/16P |
1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/+5 V/+3 V Dual SPDT Switch REV. B |
Micro Linear Corporatio...
|
ML2731 |
181Kb/12P |
PA Bias Controller |
FERYSTER Inductive Comp...
|
OBUD-TOR-R10 |
193Kb/1P |
pA 66 Recyclingmaterial |
OBUD-EFD25 |
93Kb/1P |
PA-66 101L |
PHOENIX CONTACT
|
3240499 |
71Kb/3P |
RVT-PA 6 May 9, 2011 |
ANADIGICS, Inc
|
AWU6608 |
567Kb/13P |
HELP3TM Band 8 / WCDMA 3.4 V / 28.5 dBm Linear PA Module |