Moteur de recherche de fiches techniques de composants électroniques
Selected language     French  ▼
  Nom de la pièce     
   Description    

   
 

TRANSISTOR Fiches techniques, Datasheet

Lowpower Semiconductor inc(8)NXP Semiconductors(2029)Pan Jit International Inc.(72)Panasonic Battery Group(1)Panasonic Semiconductor(287)PerkinElmer Optoelectronics(1)PHOENIX CONTACT(4)PMC-Sierra, Inc(2)Polyfet RF Devices(276)Power Innovations Ltd(13)Powerex Power Semiconductors(58)QT Optoelectronics(1)Rectron Semiconductor(130)Renesas Technology Corp(461)RF Micro Devices(3)RFHIC(4)RHOPOINT COMPONENTS(2)RICOH electronics devices division(1)Rochester Electronics(1)Rohm(1029)SamHop Microelectronics Corp.(310)Samsung semiconductor(143)Sanken electric(395)SanRex Corporation(20)Sanyo Semicon Device(286)Savantic, Inc.(4)SeCoS Halbleitertechnologie GmbH(928)Seiko Instruments Inc(4)Seme LAB(358)Semicoa Semiconductor(107)SemiHow Co.,Ltd.(30)SemiWell Semiconductor(23)Semtech Corporation(15)SEMTECH ELECTRONICS LTD.(327)Sensitron(3)Seoul Semiconductor(1)Sharp Electrionic Components(3)Shenzhen Ping Sheng Electronics Co., Ltd.(5)SHENZHEN SLS TECHNOLOGY CO.,LTD.(1)SHIKE Electronics(65)Shindengen Electric Mfg.Co.Ltd(78)Shunye Enterprise(1)Siemens Semiconductor Group(490)SiGe Semiconductor, Inc.(1)Silan Microelectronics Joint-stock(2)Silicon Standard Corp.(6)Sipex Corporation(1)Sirectifier Global Corp.(4)SIRENZA MICRODEVICES(4)Skyworks Solutions Inc.(4)Solid States Devices, Inc(199)Sony Corporation(3)Stanson Technology(47)STMicroelectronics(789)SUNMATE electronic Co., LTD(12)Sunspirit Electronic Ltd(2)Suntac Electronic Corp.(14)Supertex, Inc(2)Surge Components(9)SynQor Worldwide Headquarters(1)Tachyonics CO,. LTD(12)TAITRON Components Incorporated(16)Taiwan Memory Technology(1)Taiwan Semiconductor Company, Ltd(217)Teledyne Technologies Incorporated(7)TEMIC Semiconductors(11)Texas Instruments(10)Texas Instruments(20)Thinki Semiconductor Co., Ltd.(30)Tiger Electronic Co.,Ltd(62)Torex Semiconductor(14)Toshiba Semiconductor(828)Transys Electronics(45)TRANSYS Electronics Limited(15)TriQuint Semiconductor(67)TT Electronics.(69)TY Semiconductor Co., Ltd(1)Vishay Telefunken(1)
voir plus
Description trouvée : 'Transistor' - Totale: 47 (1/3) Page
FabricantNo de pièceVoirDescription

Stanson Technology
ST3407SRG ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
A733 PNP TRANSISTOR
8550 PNP TRANSISTOR
STN4440 STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4426 STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4546 STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP4803 STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN1810 STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST2315SRG ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST2341A ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP6308 STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST3400SRG The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
ST2304SRG ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST2318SRG ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
B772 PNP TRANSISTOR
ST3406SRG ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4392 STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4346 STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
8550S PNP TRANSISTOR
8050 NPN TRANSISTOR

  1 2 3


Lien URL :

AllDATASHEET vous a-t-il été utile ?   [ DONATE ]  

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Favoris   |   Echange de liens   |   Fabricants
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com
Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es
French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn