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TRANSISTOR Fiches techniques, Datasheet

Lowpower Semiconductor inc(8)NXP Semiconductors(2029)Pan Jit International Inc.(72)Panasonic Battery Group(1)Panasonic Semiconductor(287)PerkinElmer Optoelectronics(1)PHOENIX CONTACT(4)PMC-Sierra, Inc(2)Polyfet RF Devices(276)Power Innovations Ltd(13)Powerex Power Semiconductors(58)QT Optoelectronics(1)Rectron Semiconductor(130)Renesas Technology Corp(461)RF Micro Devices(3)RFHIC(4)RHOPOINT COMPONENTS(2)RICOH electronics devices division(1)Rochester Electronics(1)Rohm(1029)SamHop Microelectronics Corp.(310)Samsung semiconductor(143)Sanken electric(395)SanRex Corporation(20)Sanyo Semicon Device(286)Savantic, Inc.(4)SeCoS Halbleitertechnologie GmbH(928)Seiko Instruments Inc(4)Seme LAB(358)Semicoa Semiconductor(107)SemiHow Co.,Ltd.(30)SemiWell Semiconductor(23)Semtech Corporation(15)SEMTECH ELECTRONICS LTD.(327)Sensitron(3)Seoul Semiconductor(1)Sharp Electrionic Components(3)Shenzhen Ping Sheng Electronics Co., Ltd.(5)SHENZHEN SLS TECHNOLOGY CO.,LTD.(1)SHIKE Electronics(65)Shindengen Electric Mfg.Co.Ltd(78)Shunye Enterprise(1)Siemens Semiconductor Group(490)SiGe Semiconductor, Inc.(1)Silan Microelectronics Joint-stock(2)Silicon Standard Corp.(6)Sipex Corporation(1)Sirectifier Global Corp.(4)SIRENZA MICRODEVICES(4)Skyworks Solutions Inc.(4)Solid States Devices, Inc(199)Sony Corporation(3)Stanson Technology(47)STMicroelectronics(789)SUNMATE electronic Co., LTD(12)Sunspirit Electronic Ltd(2)Suntac Electronic Corp.(14)Supertex, Inc(2)Surge Components(9)SynQor Worldwide Headquarters(1)Tachyonics CO,. LTD(12)TAITRON Components Incorporated(16)Taiwan Memory Technology(1)Taiwan Semiconductor Company, Ltd(217)Teledyne Technologies Incorporated(7)TEMIC Semiconductors(11)Texas Instruments(10)Texas Instruments(20)Thinki Semiconductor Co., Ltd.(30)Tiger Electronic Co.,Ltd(62)Torex Semiconductor(14)Toshiba Semiconductor(828)Transys Electronics(45)TRANSYS Electronics Limited(15)TriQuint Semiconductor(67)TT Electronics.(69)TY Semiconductor Co., Ltd(1)Vishay Telefunken(1)
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Description trouvée : 'TRANSISTOR' - Totale: 47 (1/3) Page
FabricantNo de pièceVoirDescription

Stanson Technology
STN6303 STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4426 STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST3407SRG ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
8050S NPN TRANSISTOR
STN4480 STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4438 STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP9437 STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
D2152 NPN TRANSISTOR
STN4526 STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
D2150 NPN TRANSISTOR
STN4546 STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST2315SRG ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST3422A The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
8050 NPN TRANSISTOR
C945 NPN TRANSISTOR
STN6335 STN6335 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
D882 PNP TRANSISTOR
8550S PNP TRANSISTOR
ST7400 ST7400 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST3400SRG The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

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