Fabricant | No de pièce | Fiches technique | Description |
Infineon Technologies A...
|
IDW10G120C5B |
815Kb/10P |
Revolutionary semiconductor material - Silicon Carbide Rev. 2.0 2014-06-10 |
IDW30G120C5B |
593Kb/10P |
Revolutionary semiconductor material - Silicon Carbide Rev. 2.0 2014-06-10 |
IDW20G120C5B |
593Kb/10P |
Revolutionary semiconductor material - Silicon Carbide Rev. 2.0 2014-06-10 |
IDW15G120C5B |
590Kb/10P |
Revolutionary semiconductor material - Silicon Carbide Rev. 2.0 2014-06-10 |
IDW40G120C5B |
593Kb/10P |
Revolutionary semiconductor material - Silicon Carbide Rev. 2.0 2014-06-10 |
IPA60R950C6 |
1Mb/18P |
Metal Oxide Semiconductor Field Effect Transistor Rev. 2.1, 2010-03-11 |
IPA60R280C6 |
2Mb/19P |
Metal Oxide Semiconductor Field Effect Transistor Rev. 2.1, 2010-02-09 |
IPP60R190C6 |
2Mb/19P |
Metal Oxide Semiconductor Field Effect Transistor Rev. 2.1, 2010-02-09 |
IPC302N20N3 |
544Kb/4P |
Metal Oxide Semiconductor Field Effect Transistor Rev.2.6,2015-04-08 |
IPP50R500C |
1Mb/14P |
Metal Oxide Semiconductor Field Effect Transistor Rev.2.1,2014-06-06 |
IPW60R330P6 |
3Mb/19P |
Metal Oxide Semiconductor Field Effect Transistor Rev.2.2,2015-07-10 |
BSZ0506NS |
1Mb/12P |
Metal Oxide Semiconductor Field Effect Transistor Rev.2.0,2015-04-27 |
IPX65R660CFDA |
2Mb/15P |
Metal Oxide Semiconductor Field Effect Transistor Rev.2.1,2014-11-19 |
IPA65R190C7 |
1Mb/15P |
Metal Oxide Semiconductor Field Effect Transistor Rev.2.0,2013-10-18 |
IPA60R520E6 |
1Mb/16P |
Metal Oxide Semiconductor Field Effect Transistor Rev. 2.2, 2014-12-10 |
IPP65R190C7 |
1Mb/15P |
Metal Oxide Semiconductor Field Effect Transistor Rev.2.1,2013-10-17 |
IPP60R190P6 |
1Mb/15P |
Metal Oxide Semiconductor Field Effect Transistor Rev.2.0,2013-06-07 |
IPD65R250E6 |
1Mb/15P |
Metal Oxide Semiconductor Field Effect Transistor Rev.2.2,2013-07-30 |
BSC110N15NS5 |
1Mb/12P |
Metal Oxide Semiconductor Field Effect Transistor Rev.2.1,2015-06-09 |
IPL65R460CFD |
1Mb/15P |
Metal Oxide Semiconductor Field Effect Transistor Rev.2.0,2013-05-28 |