Fabricant | No de pièce | Fiches technique | Description |
Samsung semiconductor
|
K7R163684B |
456Kb/19P |
512Kx36 & 1Mx18 QDRTM II b4 SRAM |
K7R323684M |
195Kb/18P |
1Mx36 & 2Mx18 QDRTM II b4 SRAM |
K7S3236T4C |
440Kb/20P |
1Mx36 & 2Mx18 QDRTM II+ b4 SRAM |
K7R643684M |
352Kb/18P |
2Mx36 & 4Mx18 QDRTM II b4 SRAM |
K7R161882B |
428Kb/19P |
512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM |
K7R163682B |
463Kb/20P |
512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM |
DS_K7R323682M |
201Kb/19P |
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM |
K7R643682M |
364Kb/19P |
2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM |
Renesas Technology Corp
|
PD46365084B |
598Kb/39P |
36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION |
PD46365092B |
619Kb/36P |
36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION |
Cypress Semiconductor
|
CY7C1311AV18 |
327Kb/22P |
18-Mb QDRTM-II SRAM 4-Word Burst Architecture |
Renesas Technology Corp
|
PD46365092B |
619Kb/36P |
36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION |
UPD46365092B |
619Kb/36P |
36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION Nov 09, 2012 |
PD46185092B |
643Kb/36P |
18M-BIT QDRTM II SRAM 2-WORD BURST OPERATION |
PD46185092B |
643Kb/36P |
18M-BIT QDRTM II SRAM 2-WORD BURST OPERATION |
PD44165084B |
503Kb/40P |
18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION |
UPD44165084B |
491Kb/40P |
18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION October 6, 2011 |
UPD46185084B |
597Kb/39P |
18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION Nov 09, 2012 |
UPD46365084B |
598Kb/39P |
36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION Nov 09 2012 |
PD46365084B |
598Kb/39P |
36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION |