Fabricant | No de pièce | Fiches technique | Description |
Lowpower Semiconductor ...
|
LPA2176 |
607Kb/12P |
Filterless 6W Class- F Mono Audio Amplifier integrated Non-Crack Noise function |
Amphenol Corporation
|
C-L17DM53745-217 |
102Kb/1P |
no burrs,no crack on the contact |
Shanghai awinic technol...
|
AW8110 |
689Kb/14P |
Non-Crack-Noise, Ultra-Low-EMI, 3W, Mono, Filter-Free, Class-D Audio Amplifier |
AW8155A |
1Mb/24P |
Non-Crack-Noise, Ultra-Low-THD+N,Ultra-Low-EMI, Second Generation Class-D Audio Amplifier |
Shanghai Leiditech Elec...
|
20D561K |
1Mb/4P |
APPEARANCE WITHOUT DIRT&CRACK,MARKING SHOULD BE CLEAR |
14D180L |
1Mb/5P |
APPEARANCE WITHOUT DIRT&CRACK,MARKING SHOULD BE CLEAR |
05D471K |
1Mb/4P |
APPEARANCE WITHOUT DIRT&CRACK,MARKING SHOULD BE CLEAR |
14D511KJ3 |
1Mb/5P |
APPEARANCE WITHOUT DIRT&CRACK,MARKING SHOULD BE CLEAR |
07D180LJ |
1Mb/5P |
APPEARANCE WITHOUT DIRT&CRACK,MARKING SHOULD BE CLEAR |
05D180L |
1Mb/5P |
APPEARANCE WITHOUT DIRT&CRACK,MARKING SHOULD BE CLEAR |
10D271KI3.3 |
1Mb/4P |
APPEARANCE WITHOUT DIRT&CRACK,MARKING SHOULD BE CLEAR |
List of Unclassifed Man...
|
BHSD-2032 |
60Kb/1P |
Polypropylene, High environment stress crack resistance,Color Clear |
Shanghai Leiditech Elec...
|
20D561KJ |
1Mb/5P |
APPEARANCE WITHOUT DIRT&CRACK,MARKING SHOULD BE CLEAR |
List of Unclassifed Man...
|
S-2210R |
193Kb/1P |
NON-VOLATILE MEMORY/NON-VOLATILE RAM |
Laird Tech Smart Techno...
|
NCE250 |
398Kb/1P |
Non-conductive |
Toshiba Semiconductor
|
TC7SA34F |
208Kb/8P |
Non-Inverter |
TC7SG34FU |
170Kb/6P |
NON-Inverter |
Schurter Inc.
|
0034.1518 |
1Mb/1P |
non resettable |
Toshiba Semiconductor
|
TC7SG34FE |
169Kb/6P |
NON-Inverter |
TC7SZ34F |
175Kb/7P |
Non-Inverter |