Fabricant | No de pièce | Fiches technique | Description |
Renesas Technology Corp
|
IDTF0480NBGI8 |
2Mb/28P |
400 MHz ??2700 MHz 13 dB typical max gain |
RJK03M0DPA |
173Kb/7P |
30V, 65A, 1.9m廓max N Channel Power MOS FET |
HAT1111C |
387Kb/7P |
-60V, -2A, 307m max Silicon P Channel MOS FET Power Switching |
RJK0851DPB |
108Kb/7P |
80V, 20A, 23m??max. Silicon N Channel Power MOS FET Power Switching |
RJK0655DPB |
158Kb/7P |
60V, 35A, 6.7m??max. Silicon N Channel Power MOS FET Power Switching |
RJK0451DPB |
108Kb/7P |
40V, 35A, 7.0m??max. Silicon N Channel Power MOS FET Power Switching |
RJK0451DPB |
108Kb/7P |
40V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching |
RJK03P7DPA |
259Kb/11P |
MOS2 30 V, 30 A, 5.3 m max. High Speed Power Switching |
RJK0851DPB |
108Kb/7P |
80V, 20A, 23m max. Silicon N Channel Power MOS FET Power Switching |
RJK0853DPB |
108Kb/7P |
80V, 40A, 8.0m max. Silicon N Channel Power MOS FET Power Switching |
RJK0653DPB |
108Kb/7P |
60V, 45A, 4.8m max. Silicon N Channel Power MOS FET Power Switching |
RJK0655DPB |
158Kb/7P |
60V, 35A, 6.7m max. Silicon N Channel Power MOS FET Power Switching |
RJK03H1DPA |
176Kb/7P |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET |
RJK1054DPB |
136Kb/7P |
100V, 20A, 22m max Silicon N Channel Power MOS FET Power Switching |
RJK0454DPB |
152Kb/7P |
40V, 40A, 4.9m max. Silicon N Channel Power MOS FET Power Switching |
RJK1211DNS |
118Kb/7P |
120V, 5A, 130m max. Silicon N Channel Power MOS FET Power Switching |
RJK0656DPB |
157Kb/7P |
60V, 40A, 5.6m??max. Silicon N Channel Power MOS FET Power Switching |
RJK0454DPB |
152Kb/7P |
40V, 40A, 4.9m??max. Silicon N Channel Power MOS FET Power Switching |
RJK1054DPB |
136Kb/7P |
100V, 20A, 22m??max. Silicon N Channel Power MOS FET Power Switching |
RJK0856DPB |
154Kb/7P |
80V, 35A, 8.9m??max. Silicon N Channel Power MOS FET Power Switching |