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INTEGRATED Fiches techniques, Datasheet

Lowpower Semiconductor inc(5)NXP Semiconductors(90)Panasonic Battery Group(2)Panasonic Semiconductor(20)PCA ELECTRONICS INC.(18)Peregrine Semiconductor(7)Peregrine Semiconductor Corp.(2)Pericom Semiconductor Corporation(3)PerkinElmer Optoelectronics(3)PhaseLink Corporation(1)PHOENIX CONTACT(76)PIC GmbH(3)Pixart Imaging Inc.(7)PLX Technology(1)PMC-Sierra, Inc(17)Power Analog Micoelectronics(2)Power Innovations Ltd(6)Power Integrations, Inc.(29)Powerex Power Semiconductors(1)Princeton Technology Corp(2)Protech Systems Co., Ltd.(11)Pulse A Technitrol Company(14)Purdy Electronics Corporation(1)QT Optoelectronics(2)Ramtron International Corporation(15)Realtek Semiconductor Corp.(6)Renesas Technology Corp(169)RF Micro Devices(30)RF Monolithics, Inc(1)RFHIC(2)Richtek Technology Corporation(19)Rohm(543)Roithner LaserTechnik GmbH(6)Sames(1)SamHop Microelectronics Corp.(1)Samsung semiconductor(55)Samtec, Inc(2)Sanken electric(32)Sanyo Semicon Device(27)Schurter Inc.(8)SEC Electronics Inc.(4)SeCoS Halbleitertechnologie GmbH(7)Semikron International(64)Semtech Corporation(88)Seoul Semiconductor(23)SG Micro Corp(1)Sharp Electrionic Components(1)Shenzhen Putianhe Technology Co., Ltd(1)Shenzhen Tianyuan Semiconductor Co., Ltd.(2)Shindengen Electric Mfg.Co.Ltd(1)Shoulder Electronics Limited.(2)Siemens Semiconductor Group(19)SIFIRST TECHNOLOGIES NANHAI LIMITED(1)Silan Microelectronics Joint-stock(1)Silicon Laboratories(46)Sipex Corporation(8)Sitronix Technology Co., Ltd.(8)Skyworks Solutions Inc.(27)SMSC Corporation(24)Socay Electornics Co., Ltd.(4)Solid State Optronic(2)Sony Corporation(10)Source Photonics, Inc.(18)SPANSION(6)SpectraLinear Inc(4)STANLEY ELECTRIC CO.,LTD.(1)STMicroelectronics(168)Summit Microelectronics, Inc.(1)Supertex, Inc(7)Superworld Electronics(7)SYNERGY MICROWAVE CORPORATION(2)Taiwan Memory Technology(1)Taiwan Semiconductor Company, Ltd(5)TDK Electronics(1)TE Connectivity Ltd(2)TECHCODE SEMICONDUCTOR, INC.(1)TEMEX(1)TEMIC Semiconductors(9)Teridian Semiconductor Corporation(2)Texas Instruments(485)Texas Instruments(489)Thinki Semiconductor Co., Ltd.(1)THOR communications(1)Tiger Electronic Co.,Ltd(1)Torex Semiconductor(1)Toshiba Semiconductor(512)Transys Electronics(2)TRINAMIC Motion Control GmbH & Co. KG.(9)TriQuint Semiconductor(10)Vishay Telefunken(5)
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Description trouvée : 'Integrated' - Totale: 19 (1/1) Page
FabricantNo de pièceVoirDescription

Siemens Semiconductor G...
BF1012S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
SRD00512Z Ge-Avalanche Photodiode in TO Package with Integrated Optics
CGY181 GaAs MMIC (Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier)
SRD00212Z Ternary PIN Photodiode in TO-Package with Integrated Optics
PMB2200 integrated modulator-mixer for transmit path
BAT64-W Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
CMY91 GaAs MMIC (GaAs mixer with integrated IF-amplifier for mobile communication)
CGY94 GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V)
BF1012 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
BAT64-07W Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
CGY180 GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V)
BAT64-07 Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
BF1009S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)
BF1005 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
BF1005S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
BF997 Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations)
BAT64 Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
3SB3400-1QC ACTUATOR-/INDICATOR COMPONENT WITH INTEGRATED LED 110V AC LAMP HOLDER SCREW TERMINAL GREEN
CGY92 GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier)

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