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INGAASP Fiches techniques, Datasheet

Description trouvée : 'INGAASP' - Totale: 256 (1/13) Page
FabricantNo de pièceVoirDescription

California Eastern Labs
NX7437 1 490 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
NX5321 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE

Renesas Technology Corp
NX8663JB-BC_15 LASER DIODE 1 650nm InGaAsP MQW-DFB DC-PBH PULSED LASER DIODE MODULE FOR OTDR APPLICATION

California Eastern Labs
NX7337BJ-AA 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MMF FOR OTDR APPLICATION
NX8369TS LASER DIODE 1 625 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION

Renesas Technology Corp
NX6309GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION

California Eastern Labs
NX8663JB-BC LASER DIODE 1 650nm InGaAsP MQW-DFB DC-PBH PULSED LASER DIODE MODULE FOR OTDR APPLICATION
NX8304BE NECs 1310 nm InGaAsP MQW-DFB LASER DIODE
NX8560MC NECs EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE WITH DRIVER FOR 10 Gb/s APPLICATIONS
NX7312UA NECs 1310 nm InGaAsP MQW FP TOSA FOR SHORT HAUL 155 Mb/s and 622 Mb/s APPLICATIONS
NX7561JB-BC NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (135 mW MIN)
NX5312 NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS

NEC
NDL7563P InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION
NX8563LB CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS

Mitsubishi Electric Sem...
ML9XX18 InGaAsP MQW-DFB LASER DIODE WITH EA MODULATOR

NEC
NDL7605P 1 310 nm OPTICAL CATV RETURN PATH APPLICATIONS InGaAsP MQW DFB LASER DIODE MODULE WITH ISOLATOR

KODENSHI KOREA CORP.
KLT-231412 1310nm InGaAsP strained MQW DFB LD for 1.25G 2.0 TO CAN
KLT-155454 1550nm InGaAsP strained MQW FP-LD

Renesas Technology Corp
NX5521 LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE

Mitsubishi Electric Sem...
ML7XX45 1310nm InGaAsP FP LASER DIODES

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