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INGAASP Fiches techniques, Datasheet

Description trouvée : 'INGAASP' - Totale: 256 (1/13) Page
FabricantNo de pièceVoirDescription

California Eastern Labs
NX5312_06 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
NX7339BB-AA 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION

Hitachi Semiconductor
HL1326MF InGaAsP Laser Diodes

California Eastern Labs
NX6301 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
NX5315 NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
NX7328BF-AA NECs 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (70mW MIN)
NX8508 NECs InGaAsP MQW-DFB LASER MODULE IN COAXIAL PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS
NX6506 NECs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS
NX8601BF-AA LASER DIODE 1 625 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
NX8300BE NECs 1310 nm InGaAsP MQW-DFB LASER DIODE

Renesas Technology Corp
NX7637BF-AA 1 625 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION

California Eastern Labs
NX8517XC 1 470 TO 1 610 nm FOR CWDM 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA

Renesas Technology Corp
NX5522 LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE

KODENSHI KOREA CORP.
KLT-255444 1550nm InGaAsP strained MQW 1.25Gbps DFB LD TO CAN

Renesas Technology Corp
NX6510GH LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2

NEC
NX5321 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
NDL7408P 1 310 nm InGaAsP STRAINED MQW DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLE MODE FIBER
NDL7701P 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DFB DC-PBH LASER DIODE MODULE

California Eastern Labs
NX5307 NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s INTRA-OFFICE APPLICATION

NEC
NDL7515P InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION

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