GBIT Datasheet(PDF) - TH58BYG3S0HBAI4

Fabricant	No de pièce	Fiches technique	Description
Toshiba Semiconductor	TH58BYG3S0HBAI4	2Mb/54P	8 GBIT (1G × 8 BIT) CMOS NAND E2PROM 2018-06-01C
	TH58BVG3S0HBAI4	2Mb/54P	8 GBIT (1G × 8 BIT) CMOS NAND E2PROM 2018-06-01C
	TH58BVG3S0HBAI6	2Mb/54P	8 GBIT (1G × 8 BIT) CMOS NAND E2PROM 2018-06-01C
	TH58BVG3S0HTAI0	2Mb/54P	8 GBIT (1G × 8 BIT) CMOS NAND E2PROM 2018-06-01C
	TC58DVG3S0ETA00	621Kb/73P	8 GBIT (1G × 8 BIT) CMOS NAND E2 PROM 2009-03-09C
	TC58BVG2S0HBAI6	2Mb/53P	4 GBIT (512M × 8 BIT) CMOS NAND E2 PROM 2018-06-01C
	TC58NVG2S3ETA00	499Kb/70P	4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
	TC58NVG0S3AFT05	559Kb/33P	1 GBIT (128M 횞 8 BITS) CMOS NAND EEPROM
	TC58NVG2S0FTAI0	527Kb/71P	4 GBIT (512M × 8 BIT) CMOS NAND E2 PROM 2012-09-01
	TH58NVG5S0FTA20	677Kb/73P	32 GBIT (4G 횞 8 BIT) CMOS NAND E2PROM
	TC58NVG1S3ETA00	497Kb/65P	2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
	TC58NYG2S3ETA00	504Kb/70P	4 GBIT (512M × 8 BIT) CMOS NAND E2 PROM 2010-07-13C
	TC58NVG4S2FTA00	608Kb/72P	16 GBIT (2G × 8 BIT) CMOS NAND E2 PROM 2009-10-02C
	TC58NVG2S0FBAI4	679Kb/71P	4 GBIT (512M X 8 BIT) CMOS NAND E2 PROM 2012-09-01
	TC58NYG2S0FBAI4	1Mb/71P	4 GBIT (512M X 8 BIT) CMOS NAND E2 PROM 2012-09-01
	TC58NVG5D2ELA48	579Kb/65P	32 GBIT (4G × 8 BIT) CMOS NAND E2 PROM (Multi-Level-Cell) 2008-07-18C
	TC58NYG1S3EBAI5	489Kb/65P	MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M 횞 8 BIT) CMOS NAND E2PROM
	TH58NS100DC	432Kb/43P	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )

GBIT Fiches technique, PDF

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