Fabricant | No de pièce | Fiches technique | Description |
Microsemi Corporation
|
TSC331 |
433Kb/1P |
Gate Expander |
050R |
166Kb/3P |
Anode Gate Silicon Controlled Rectifier |
MSAGX60F60A |
50Kb/2P |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
MSAGZ52F120A |
52Kb/2P |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
PPNGZ52F120A |
102Kb/3P |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
MSAGX75L60A |
48Kb/2P |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
MSAGX75F60A |
45Kb/2P |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
MSAHX75L60C |
49Kb/2P |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
APT25GN120B |
154Kb/6P |
Utilizing the latest Field Stop and Trench Gate technologies |
A1225A-PQ100I |
2Mb/54P |
Up to 8,000 Gate Array Gates(20,000 PLD equivalent gates) |
MM118-XX |
116Kb/3P |
3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE |
A1425A-PL84C |
4Mb/90P |
Up to 10,000 Gate Array Equivalent Gates (up to 25,000 equivalent PLD Gates) |