| Fabricant | No de pièce | Fiches technique | Description |
Unisonic Technologies
|
UESD4CUSB30G-AF5-R |
133Kb/4P |
Flow-Through Pin Mapping |
Samsung semiconductor
|
DS_K7M323625M |
211Kb/18P |
1Mx36 & 2Mx18 Flow-Through NtRAM |
Honeywell Accelerometer...
|
26PCBFD2G |
238Kb/3P |
Gage Unamplified Compensated Flow-Through |
Samsung semiconductor
|
K7M163635B |
394Kb/19P |
512Kx36 & 1Mx18 Flow-Through NtRAM |
Integrated Circuit Solu...
|
IC61SF25632T |
476Kb/19P |
8Mb SyncBurst Flow through SRAM |
Samsung semiconductor
|
K7M323635C |
391Kb/19P |
1Mx36 & 2Mx18 Flow-Through NtRAM |
| K7M803625B |
395Kb/19P |
256Kx36 & 512Kx18 Flow-Through NtRAM |
Integrated Silicon Solu...
|
IS61LF102436A |
420Kb/20P |
36Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
Samsung semiconductor
|
K7M803625B |
375Kb/18P |
256Kx36 & 512Kx18-Bit Flow Through NtRAM |
Amphenol Corporation
|
GE-2102 |
324Kb/4P |
Inline Flow-Through Fluid Temperature Sensor |
Texas Instruments
|
SN74AC11004 |
816Kb/13P |
Flow-Through Architecture Optimizes PCB Layout |
Samsung semiconductor
|
K7M163625A |
211Kb/18P |
512Kx36 & 1Mx18-Bit Flow Through NtRAM |
Fairchild Semiconductor
|
FIN1047 |
315Kb/9P |
3.3V LVDS 4-Bit Flow-Through |
Samsung semiconductor
|
K7M803625A |
319Kb/20P |
256Kx36 & 512Kx18 Flow-Through NtRAM TM |
| K7M163625M |
354Kb/20P |
512Kx36 & 1Mx18 Flow-Through NtRAM-TM |
GSI Technology
|
GS8161FZ18BD |
1Mb/28P |
18Mb Flow Through Synchronous NBT SRAM |
Cypress Semiconductor
|
CY7C1353B |
535Kb/15P |
256Kx18 Flow-Through SRAM with NoBL Architecture |
NEC
|
UPD4481161 |
326Kb/28P |
8M-BIT ZEROSB SRAM FLOW THROUGH OPERATION |
MKS Instruments.
|
DELTA |
311Kb/4P |
PROCESS OPTIMIZATION THROUGH PRECISE FLOW RATIO CONTROL |
NEC
|
UPD44321181 |
299Kb/24P |
32M-BIT ZEROSB SRAM FLOW THROUGH OPERATION |
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