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DIODE Fiches techniques, Datasheet

Changzhou Shunye Electronics Co.,Ltd.(21)NXP Semiconductors(666)P-tec Corporation(1)PACELEADER INDUSTRIAL(3)Pan Jit International Inc.(247)Panasonic Semiconductor(44)Pasternack Enterprises, Inc.(146)Peregrine Semiconductor Corp.(10)PHOENIX CONTACT(51)Pixart Imaging Inc.(2)Power Analog Micoelectronics(8)Power Innovations Ltd(5)Power Integrations, Inc.(27)Power Semiconductors(120)Powerex Power Semiconductors(162)Powersem GmbH(106)Protek Devices(95)QT Optoelectronics(22)Raytheon Company(4)Rectron Semiconductor(123)Renesas Technology Corp(727)RFE international(5)Richtek Technology Corporation(4)Rochester Electronics(40)Rohm(3502)Roithner LaserTechnik GmbH(579)Ruichips Semiconductor Co., Ltd(4)Sames(1)SamHop Microelectronics Corp.(19)Samsung semiconductor(7)Samtec, Inc(12)Sangdest Microelectronic (Nanjing) Co., Ltd(61)Sanken electric(387)SanRex Corporation(118)Sanyo Semicon Device(361)SEC Electronics Inc.(3)SeCoS Halbleitertechnologie GmbH(358)Seme LAB(65)Semicoa Semiconductor(1)SemiHow Co.,Ltd.(12)Semikron International(239)SemiWell Semiconductor(1)SEMPO ELECTRONIC Limited(24)Semtech Corporation(114)SEMTECH ELECTRONICS LTD.(221)Sensitron(39)Seoul Semiconductor(2)Shanghai Semitech Semiconductor Co., Ltd(2)Shanghai Sunrise Electronics(10)Sharp Electrionic Components(50)Shenzhen Ping Sheng Electronics Co., Ltd.(7)Shenzhen Taychipst Electronic Co., Ltd(16)SHIKE Electronics(20)Shindengen Electric Mfg.Co.Ltd(521)Shunye Enterprise(52)Siemens Semiconductor Group(211)Silan Microelectronics Joint-stock(51)Silicon Standard Corp.(13)Silikron Semiconductor Co.,LTD.(1)Sipex Corporation(1)Sirectifier Global Corp.(10)Sirectifier Semiconductors(47)Skyworks Solutions Inc.(28)SMSC Corporation(1)Socay Electornics Co., Ltd.(4)Solid States Devices, Inc(54)Solitron Devices Inc.(4)Sony Corporation(91)Source Photonics, Inc.(25)STANLEY ELECTRIC CO.,LTD.(4)Stanson Technology(7)StarHope(43)STMicroelectronics(300)Summit Microelectronics, Inc.(1)SunLED Corporation(10)SUNMATE electronic Co., LTD(870)Suntan Capacitors(1)Supertex, Inc(1)Surge Components(21)SYNC POWER Crop.(2)SynSemi, Inc.(45)System Logic Semiconductor(1)TAITRON Components Incorporated(43)Taiwan Memory Technology(1)Taiwan Semiconductor Company, Ltd(322)Tak Cheong Electronics (Holdings) Co.,Ltd(51)TE Connectivity Ltd(7)TEMIC Semiconductors(2)Texas Instruments(71)Texas Instruments(51)Thinki Semiconductor Co., Ltd.(123)Thinking Electronic Industrial Co.,Ltd(5)Tiger Electronic Co.,Ltd(10)TOKO, Inc(42)Torex Semiconductor(140)Toshiba Semiconductor(415)Transys Electronics(44)TRANSYS Electronics Limited(96)TT Electronics.(35)Vishay Telefunken(22)Xian Semipower Electronic Technology Co., Ltd.(2)
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Description trouvée : 'DIODE' - Totale: 414 (1/21) Page
FabricantNo de pièceVoirDescription

Toshiba Semiconductor
1SS398_15 TOSHIBA Diode Silicon Epitaxial Planar Diode
1SS397_15 TOSHIBA Diode Silicon Epitaxial Planar Diode
1SS399_15 TOSHIBA Diode Silicon Epitaxial Planar Diode
1SV311_14 TOSHIBA Diode Silicon Epitaxial Planar Type
1SS393 DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
TFR1N DIODE (STROBO FLASHER APPLICATIONS) (FAST RECOVERY)
CRS12_13 TOSHIBA Schottky Barrier Diode
JDV2S19S TOSHIBA Diode Silicon Epitaxial Planar Type
U5ZA27C TOSHIBA ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE
TLP595G The Toshiba TLP595G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET
TRS16N65D SiC Schottky Barrier Diode
1SS406_14 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
U5ZA53C Silicon Diffused-Junction Type Zener Diode
1SS369 DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
1SS352 DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
TRS12N65D SiC Schottky Barrier Diode
CMS15I40A Schottky Barrier Diode
20DL2CZ51A DIODE (SWITCHING TYPE POWER SUPPLY APPLICATION)
SSM5H11TU Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
1SS391_14 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

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