Fabricant | No de pièce | Fiches technique | Description |
Infineon Technologies A...
|
AUIRS2181S |
670Kb/22P |
Floating channel designed for bootstrap operation January 10, 2014 |
AUIRS2191S |
353Kb/19P |
Floating channel designed for bootstrap operation November 18, 2013 |
IKW50N60TA |
951Kb/14P |
Designed for DC/AC converters for Automotive Application Rev. 2.3 17.09.2014 |
IKW75N60TA |
1,003Kb/13P |
Designed for DC/AC converters for Automotive Application Rev. 2.3 14.07.2014 |
IKW20N60TA |
606Kb/13P |
Designed for DC/AC converters for Automotive Application Rev. 2.2 27.08.2013 |
IKW30N60TA |
671Kb/14P |
Designed for DC/AC converters for Automotive Application Rev. 2.3 17.09.2014 |
BGS12PL6BOARD |
82Kb/3P |
BGS12PL6 general purpose high RF power SPDT switch is designed |
BAR95 |
458Kb/7P |
Designed for antenna switch modules (ASM) in battery-powered mobile systems 2006-02-03 |
BGS15AN16BOARD |
80Kb/3P |
BGS15AN16 RF MOS switch is specifically designed for WCDMA diversity applications. |
TLE94003EP |
1Mb/38P |
protected triple half-bridge driver designed especially for automotive motion control Datasheet 1.0 2017-12-07 |
TLE94004EP |
1Mb/35P |
protected quad half-bridge driver designed especially for automotive motion control Datasheet 1.0 2017-12-07 |
TLE94103EP |
1Mb/64P |
protected triple half-bridge driver designed especially for automotive motion control Datasheet 1.0 2017-12-07 |
TLE94104EP |
1Mb/63P |
protected quad half-bridge driver designed especially for automotive motion control Datasheet 1.0 2017-12-07 |
IHW40N60RF |
1Mb/15P |
Powerful monolithic body diode with low forward voltage designed for soft commutation only Rev.2.6,2015-01-26 |
TLE94108EL |
2Mb/76P |
a protected eight-fold half-bridge driver designed especially for automotive motion control applications 1.0 2016-08-27 |
TLE94110EL |
2Mb/80P |
a protected ten-fold half-bridge driver designed especially for automotive motion control applications 1.0 2016-08-27 |
TLE94112EL |
2Mb/80P |
a protected twelve-fold half-bridge driver designed especially for automotive motion control applications 1.0 2016-08-27 |
IPB60R120C7 |
1Mb/15P |
CoolMOS??C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Rev.2.0,2015-11-30 |
AUIRF1018ES |
664Kb/10P |
Specifically designed for Automotive applications, this HEXFET짰 Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. 2015-11-23 |
IPB60R060C7 |
1Mb/15P |
CoolMOS??C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Rev.2.0,2015-11-30 |