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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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ARSENIDE Fiches technique, PDF |
| Mot-clé recherché : 'Arsenide' - Totale: 191 (10/10) Pages |
| Fabricant | No de pièce | Fiches technique | Description |
 Texas Instruments |
TIL193 | 
85Kb/6P |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
| TIL103 |
373Kb/4P |
GALLIUM ARSENIDE DIODE INFRARED SOURCE OPTICALLY COUPLED TO A HIGH-GAIN N-P-N SILICON PHOTOTRANSISTOR | |
 Everlight Electronics C... |
ITR9702 |
235Kb/8P |
Gallium arsenide infrared emitting diode which is coupled with a silicon photo transistor in a plastic housing |
 Kingbright Corporation |
KPC-3216 |
135Kb/5P |
The High Effciency Red sourse color devices are made with Galium Arsenide Phosphide Orange Light Emitting Diode |
| WP7113YD5V |
310Kb/7P |
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode. | |
 Toshiba Semiconductor |
TLP595G |
318Kb/8P |
The Toshiba TLP595G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET |
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Kingbright Corporation |
WP710A10YD5V |
312Kb/7P |
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode. |
| WP710A10ID5V |
309Kb/7P |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. | |
| WP7113ID5V |
312Kb/7P |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. | |
| PSA08-11EWA |
73Kb/3P |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. | |
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Toshiba Semiconductor |
TLP4592G |
217Kb/6P |
The Toshiba TLP4592G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a DIP package. |
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