Fabricant | No de pièce | Fiches technique | Description |
Infineon Technologies A...
|
BSL716SN |
533Kb/10P |
Avalanche rated Rev 2.0 2014-09-30 |
BSL303SPE |
417Kb/10P |
Avalanche rated Rev 2.0 2014-11-18 |
SPP80P06PG |
525Kb/11P |
SIPMOS횘 Power-Transistor Features Enhancement mode Avalanche rated Rev 1.4 2009-11-19 |
SPD30P06P |
557Kb/10P |
SIPMOS횘 Power-Transistor Features Enhancement mode Avalanche rated Rev 2.3 2008-09-02 |
SPD18P06P |
567Kb/10P |
SIPMOS횘 Power-Transistor Features Enhancement mode Avalanche rated Rev 3.4 2008-09-02 |
SPP08P06P |
843Kb/10P |
P-Channel Enhancement mode Avalanche rated dv/dt rated Rev 1.5 2009-04-14 |
IPDH6N03LA |
542Kb/12P |
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated Rev. 1.5 2008-04-14 |
SPD30N03S2L-07 |
658Kb/9P |
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated 02-09-2008 |
IPB12CNE8N |
552Kb/12P |
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated Rev. 1.05 2007-08-29 |
SPD07N20 |
830Kb/10P |
SIPMOS횘 Power Transistor Features N channel Enhancement mode Avalanche rated Rev. 2.4 2008-09-01 |
IPB26CN10N |
547Kb/12P |
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated Rev. 1.08 2010-04-28 |
SPD50N03S2-07 |
647Kb/9P |
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated 02-09-2008 |
IPD400N06NG |
509Kb/9P |
OptiMOS짰 Power-Transistor Features N-channel enhancement - normal level Avalanche rated Rev. 1.3 2008-09-01 |
SPP16N50C3 |
729Kb/14P |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 3.2 2009-12-22 |
SPB21N50C3 |
1Mb/12P |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 2.3 2005-11-07 |
SPP07N65C3 |
2Mb/15P |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 1.91 2009-07-23 |
SPP12N50C3 |
1Mb/14P |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 3.0 2007-08-30 |
SPI11N60CFD |
1Mb/12P |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 2.6 2009-04-24 |
SPP08N50C3 |
732Kb/14P |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 2.91 2009-11-27 |
SPP16N50C3 |
1Mb/14P |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Rev. 3.0 2007-08-30 |