Fabricant | No de pièce | Fiches technique | Description |
E-CMOS Corporation
|
EC85XX |
220Kb/6P |
35V/2.6uA/200mA, Ultra-Low-Iq, Low Dropout LDO |
Seaward Electronics Inc...
|
SE85XX |
327Kb/6P |
35V/2.6關A/200mA竊똗ltra-Low-Iq, Low Dropout LDO |
Shenzhen Huazhimei Semi...
|
HM53XXB |
2Mb/15P |
35V, 1.6關A ultra-low quiescent current, 200mA, low dropout linear regulator |
HM53XXAB |
2Mb/15P |
35V, 1.6關A ultra-low quiescent current, 200mA, low dropout linear regulator |
GOOD-ARK Electronics
|
SSFT3904U |
969Kb/7P |
35V N-Channel MOSFET |
Fairchild Semiconductor
|
FDD6635 |
203Kb/8P |
35V N-Channel PowerTrench MOSFET |
Monolithic Power System...
|
MP6500 |
1Mb/19P |
35V, 2.5A, Stepper Motor Driver |
New Japan Radio
|
NJW4820 |
131Kb/1P |
35V / 500mA Low Side Switch |
Fairchild Semiconductor
|
FDD6637 |
119Kb/8P |
35V P-Channel PowerTrench MOSFET |
Monolithic Power System...
|
MP6601 |
414Kb/14P |
35V, 2.5A, Stepper Motor Driver |
Mitsumi Electronics, Co...
|
MM1856 |
243Kb/21P |
200mA LDO |
Central Semiconductor C...
|
PB-CMKT3920_1509 |
1Mb/2P |
50V, 200mA |
Mitsumi Electronics, Co...
|
MM1836 |
222Kb/19P |
200mA LDO |
MM3566 |
200Kb/23P |
200mA LDO |
MM3411 |
283Kb/24P |
200mA LDO |
New Japan Radio
|
NJW4810 |
143Kb/1P |
35V / 1A H-Bridge Driver |
Zetex Semiconductors
|
ZXM64N035G |
63Kb/4P |
35V N-CHANNEL ENHANCEMENT MODE MOSFET |
SeCoS Halbleitertechnol...
|
KTA1505 |
125Kb/2P |
-0.5A , -35V PNP Plastic Encapsulated Transistor |
Diodes Incorporated
|
ZXM64P035L3 |
112Kb/4P |
35V P-CHANNEL ENHANCEMENT MODE MOSFET |
SeCoS Halbleitertechnol...
|
KTC3876 |
183Kb/2P |
0.5A , 35V NPN Plastic Encapsulated Transistor |