3500 Datasheet(PDF) - CGH35240F - Cree, Inc

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3500 Fiches technique, PDF

: ALL Advanced Semiconductor Business Inc.(4)Bourns Electronic Solutions(1)Coto Technology(1)Cree, Inc(8)EPCOS(1)
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Mot-clé recherché : '3500' - Totale: 8 (1/1) Pages

Fabricant	No de pièce	Fiches technique	Description
Cree, Inc	CGH35240F	1Mb/12P	240 W, 3100-3500 MHz, 50-ohm Input/
	CGHV35400F	829Kb/11P	400 W, 2900 - 3500 MHz, 50-Ohm Input
	CGH35060F2	1Mb/11P	60 W, 3100-3500 MHz, 28V, GaN HEMT
	CGHV35150	853Kb/10P	150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems
	GTVA355001EC	512Kb/6P	Thermally-Enhanced High Power RF GaN on SiC HEMTs 500 W, 50 V, 2900 ??3500 MHz
	CGHV35060MP	1Mb/8P	60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations
	CGHV35060MP	573Kb/6P	60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations
	CGHV37400F	815Kb/11P	400 W, 3500 - 3700 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

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