Moteur de recherche de fiches techniques de composants électroniques |
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2200 Fiches technique, PDF |
Mot-clé recherché : '2200' - Totale: 505 (11/26) Pages |
Fabricant | No de pièce | Fiches technique | Description |
Infineon Technologies A... |
PXAC213308FV |
1Mb/8P |
Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz Rev. 02, 2016-05-04 |
Cree, Inc |
PXAC201202FC |
590Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 - 2200 MHz |
PTMC210204MD |
1Mb/10P |
Wideband LDMOS Two-stage Integrated Power Amplifier 20 W, 28 V, 1805 ??2200 MHz | |
Kemet Corporation |
C322C222K5R5TA |
55Kb/1P |
Ceramic, GoldMax, 2200 pF, 10%, 50 V, X7R, GoldMax, Commercial Standard, Lead Spacing = 5.08mm |
Cree, Inc |
PXAC213308FV |
518Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz |
Kemet Corporation |
ESH228M016AL3AA |
76Kb/1P |
Aluminum Electrolytic, 105C, ESH, 2200 uF, 20%, 16 V, -40/+105C, Lead Spacing = 5mm |
ESH228M025AM7AA |
76Kb/1P |
Aluminum Electrolytic, 105C, ESH, 2200 uF, 20%, 25 V, -40/+105C, Lead Spacing = 7.5mm | |
ESH228M050AN2AA |
76Kb/1P |
Aluminum Electrolytic, 105C, ESH, 2200 uF, 20%, 50 V, -40/+105C, Lead Spacing = 7.5mm | |
ESK228M100AQ4AA |
76Kb/1P |
Aluminum Electrolytic, 85C, ESK, 2200 uF, 20%, 100 V, -40/+85C, Lead Spacing = 10mm | |
Infineon Technologies A... |
PTFC210202FC |
655Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz Rev. 03.4, 2016-06-22 |
Cree, Inc |
PTFA220121M |
955Kb/21P |
High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz |
Kemet Corporation |
ESH228M010AL3AA |
76Kb/1P |
Aluminum Electrolytic, 105C, ESH, 2200 uF, 20%, 10 V, -40/+105C, Lead Spacing = 5mm |
ESK228M6R3AH4AA |
76Kb/1P |
Aluminum Electrolytic, 85C, ESK, 2200 uF, 20%, 6.3 V, -40/+85C, Lead Spacing = 5mm | |
C320C222J1G5TA |
55Kb/1P |
Ceramic, GoldMax, 2200 pF, 5%, 100 V, C0G, GoldMax, Commercial Standard, Lead Spacing = 2.54mm | |
Infineon Technologies A... |
PTFA220041M |
331Kb/18P |
High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 ??2200 MHz Rev. 10.1, 2016-06-01 |
Kemet Corporation |
ESH228M6R3AL3AA |
77Kb/1P |
Aluminum Electrolytic, 105C, ESH, 2200 uF, 20%, 6.3 V, -40/+105C, Lead Spacing = 5mm |
Cree, Inc |
PTFC210202FC |
700Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz |
Kemet Corporation |
ESH228M035AM7AA |
76Kb/1P |
ESH, Aluminum Electrolytic, 105C, 2200 uF, 20%, 35 V, -40/+105C, Lead Spacing = 7.5mm |
WOLFSPEED, INC. |
PXAE213708NB |
707Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 2110 – 2200 MHz Rev. 04, 2022-12-20 |
PTFC210202FC-V1 |
828Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Rev. 06, 2023-06-28 |
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