Moteur de recherche de fiches techniques de composants électroniques |
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1800-2200 Fiches technique, PDF |
Mot-clé recherché : '1800-2200' - Totale: 758 (1/38) Pages |
Fabricant | No de pièce | Fiches technique | Description |
Powerex Power Semicondu... |
TA201800A |
473Kb/4P |
Phase Control SCR (1800 Amperes Average 2200 Volts) |
Stealth Microwave, Inc. |
SM1822-44 |
129Kb/3P |
1800-2200 MHz 25 Watt Linear Power Amplifier |
SM1822-42LS |
97Kb/2P |
1800 - 2200 MHz 15 Watt Ultra-Linear Power Amplifier | |
Cree, Inc |
CGHV22100 |
1,006Kb/11P |
100 W, 1800-2200 MHz, GaN HEMT for LTE |
CGHV22200 |
1Mb/13P |
200 W, 1800-2200 MHz, GaN HEMT for LTE | |
Stanford Microdevices |
STM-2016 |
134Kb/7P |
1800 - 2200 MHz High Linearity Silicon Germanium Active Transmit Mixer |
Powerex Power Semicondu... |
TA200116 |
200Kb/4P |
Phase Control SCR (1600-1800 Amperes Avg 100-2200 Volts) |
Infineon Technologies A... |
PTMA210404FL |
468Kb/13P |
Dual Wideband RF LDMOS Power Amplifier 40 W, 1800 ??2200 MHz Rev. 04, 2009-06-16 |
PTMA210152M |
242Kb/15P |
Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 ??2200 MHz Rev. 04, 2010-04-16 |
|
Powerex Power Semicondu... |
LD4343 |
97Kb/4P |
POW-R-BLOK Dual SCR Isolated Module (430 Amperes / 1800-2200 Volts) |
LS4343 |
99Kb/4P |
POW-R-BLOK Single SCR Isolated Module (430 Amperes / 1800-2200 Volts) | |
Cree, Inc |
PTMA210152M |
1Mb/15P |
Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 ??2200 MHz |
NXP Semiconductors |
A2G22S160-01SR3 |
761Kb/18P |
1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR Rev. 1, 01/2022 |
Infineon Technologies A... |
PXAC201202FC |
1Mb/10P |
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22 |
Cree, Inc |
PTFC210202FC |
700Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz |
WOLFSPEED, INC. |
PTFC210202FC-V1 |
828Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Rev. 06, 2023-06-28 |
Infineon Technologies A... |
PTFC210202FC |
655Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz Rev. 03.4, 2016-06-22 |
Cree, Inc |
PXAC201202FC |
590Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 - 2200 MHz |
Laird Tech Smart Techno... |
IF1800 |
1Mb/1P |
1800 MHz MicroSphere Antenna |
CTS Corporation |
VCO3069 |
171Kb/3P |
2200-2500MHz VCO |
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