Fabricant | No de pièce | Fiches technique | Description |
Cree, Inc
|
CAB011M12FM3 |
2Mb/11P |
1200 V, 11 m廓 All-Silicon Carbide |
CCB032M12FM3 |
1Mb/11P |
1200 V, 32 m廓 All-Silicon Carbide Six-Pack Module |
CAB016M12FM3 |
2Mb/11P |
1200 V, 16 m廓 All-Silicon Carbide Half-Bridge Module |
CCB021M12FM3 |
1Mb/11P |
1200 V, 21 m廓 All-Silicon Carbide Six-Pack Module |
CGHV14500 |
1Mb/11P |
500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems |
CGHV14250 |
1Mb/11P |
250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems |
CAB400M12XM3 |
801Kb/9P |
1200 V, 400 A All-Silicon Carbide Switching-Loss Optimized, Half-Bridge Module |
PTVA127002EV |
1Mb/10P |
Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 ??1400 MHz |
PTVA120501EA |
683Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz |
PTVA123501EC |
753Kb/14P |
Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 ??1400 MHz |
CGHV14800 |
765Kb/9P |
800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems |
GTVA126001EFC |
615Kb/9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 600 W, 50 V, 1200 ??1400 MHz |
CRD15DD17P |
434Kb/1P |
15DD17P: Wide Input Voltage Range (300 VDC 1200 VDC) 15 W Flyback Auxiliary Power Supply Board |
GTVA123501FA |
285Kb/4P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 50 V, 1200 ??1400 MHz |
GTVA126001EC |
615Kb/9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 600 W, 50 V, 1200 ??1400 MHz |