Fabricant | No de pièce | Fiches technique | Description |
Nexperia B.V. All right...
|
PDTC115E_SERIES |
420Kb/15P |
NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ 2004 Aug 06 |
PDTC115E_SER |
420Kb/15P |
NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ 2004 Aug 06 |
PDTA115E_SERIES |
422Kb/15P |
PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ 2004 Jul 30 |
PEMB24 |
79Kb/11P |
PNP/PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW Rev. 02 - 2 September 2009 |
PDTA115EMB |
960Kb/12P |
PNP resistor-equipped transistor; R1 = 100 k廓, R2 = 100 k廓 |
PDTC115EMB |
955Kb/12P |
NPN resistor-equipped transistor; R1 = 100 k廓, R2 = 100 k廓 |
PMV280ENEA |
269Kb/15P |
100 V, N-channel Trench MOSFET |
PMT560ENEA |
744Kb/16P |
100 V N-channel Trench MOSFET |
BUK6D385-100E |
283Kb/15P |
100 V, N-channel Trench MOSFET 29 April 2019 |
PMN280ENEA |
264Kb/14P |
100 V, N-channel Trench MOSFET 11 April 2019 |
PXP1500-100QS |
303Kb/14P |
100 V, P-channel Trench MOSFET 31 July 2023 |
PMT200EN |
336Kb/14P |
100 V N-channel Trench MOSFET 25 October 2012 |
PMV240SP |
284Kb/15P |
100 V, P-channel Trench MOSFET 25 August 2020 |
PMT280ENEA |
734Kb/16P |
100 V N-channel Trench MOSFET |
PXP400-100QS |
307Kb/14P |
100 V, P-channel Trench MOSFET 31 July 2023 |
PMT760EN |
334Kb/14P |
100 V N-channel Trench MOSFET 25 October 2012 |
PEMD24 |
246Kb/12P |
50 V, 20 mA NPN/PNP resistor-equipped double transistor; R1 = 100 kΩ, R2 = 100 kΩ 6 March 2023 |
PUMD24 |
262Kb/12P |
50 V, 20 mA NPN/PNP resistor-equipped double transistor; R1 = 100 kΩ, R2 = 100 kΩ 31 March 2023 |
BAT46GW |
693Kb/13P |
100 V, 250 mA Schottky barrier diode |
PDTC143 |
2Mb/21P |
50 V, 100 mA NPN resistor-equipped transistors |