1.7 Datasheet(PDF) - AND8028 - ON Semiconductor

Fabricant	No de pièce	Fiches technique	Description
ON Semiconductor	AND8028	37Kb/4P	Precision Sub-One Volt 1.7 Ampere Output LDO August, 2000 ??Rev. 0
	NTS4172N	107Kb/5P	Power MOSFET 30 V, 1.7 A, Single N?묬hannel, SC??0 June, 2008 ??Rev. 0
	NVMYS1D7N04C	260Kb/7P	MOSFET - Power, Single N-Channel 40 V, 1.7 m, 190 A October, 2020 ??Rev. 0
	NTMTSC1D6N10MC	262Kb/7P	MOSFET - Power, Single N-Channel 100 V, 1.7 m, 267 A September, 2021-Rev. 1
	NVMJS1D7N04C	363Kb/7P	MOSFET ??Power, Single N-Channel 40 V, 1.7 m, 185 A July, 2019 ??Rev. 1
	NVMTS1D6N10MC	324Kb/8P	MOSFET - Power, Single N-Channel 100 V, 1.7 m, 273 A April, 2021 ??Rev. 0
	NTMTS1D6N10MC	331Kb/8P	MOSFET - Power, Single N-Channel 100 V, 1.7 m, 273 A April, 2021 ??Rev. 0
	NVBLS1D7N08H	359Kb/8P	MOSFET - Power, Single N-Channel, TOLL 80 V, 1.7 m, 241.3 A January, 2021-Rev. 1
	NTBLS1D7N08H	364Kb/8P	MOSFET - Power, Single N-Channel, TOLL 80 V, 1.7 m, 203 A January, 2021 ??Rev. 2
	FGY100T120SWD	286Kb/8P	IGBT - Power, Co-PAK N-Channel, Field Stop VII (FS7), Non-SCR, TO247-3L 1200 V, 1.7 V, 100 A March, 2023 - Rev. 0
	FGY60T120SWD	291Kb/8P	IGBT - Power, Co-PAK N-Channel, Field Stop VII (FS7), Non-SCR, TO247-3L 1200 V, 1.7 V, 60 A March, 2023 - Rev. 0

1.7 Fiches technique, PDF