Moteur de recherche de fiches techniques de composants électroniques |
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0.57, Fiches technique, PDF |
Mot-clé recherché : '0.57,' - Totale: 17 (1/1) Pages |
Fabricant | No de pièce | Fiches technique | Description |
Molex Electronics Ltd. |
0354779002 |
112Kb/3P |
Wedge Terminal 14.50mm (0.57") Pitch |
ATS-639011100 |
279Kb/5P |
Fine Adjust Applicator for 14.50mm (0.57) Pitch Wedge Terminal 10-29-08 |
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STMicroelectronics |
STF12NK65Z |
777Kb/12P |
N-channel 650 V, 0.57 ohm, 10 A, TO-220FP |
ON Semiconductor |
NVBLS0D5N04M8 |
496Kb/7P |
MOSFET ??Power, Single, N-Channel 40 V, 300 A, 0.57 m June, 2019 ??Rev. 0 |
NVMFWS0D6N04XM |
153Kb/7P |
MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.57 m, 380 A April, 2023 - Rev. 0 |
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Vishay Siliconix |
V20150SG |
158Kb/5P |
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A Revision: 13-Aug-13 |
Nexperia B.V. All right... |
PSMNR51-25YLH |
295Kb/12P |
N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology 30 September 2019 |
Vishay Siliconix |
V20150SG |
167Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A Revision: 19-May-08 |
V30100P |
103Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 8 A Revision: 26-May-08 |
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VB10170C-E3 |
93Kb/4P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A Revision: 03-Jan-17 |
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V20M100M-E3 |
100Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A Revision: 11-May-16 |
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STMicroelectronics |
STF10NM60ND |
1Mb/19P |
N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode) November 2011 Rev 2 |
Hubbell Incorporated. |
YAEV8CL2BOX |
262Kb/2P |
nullRing Tongue Copper Tubing Terminal, 1.54 in L, 0.57 in W, Tin Plated, 5/16" Stud, 600 Volts Max., 105 Deg C Max |
YAEV8CL3BOX |
262Kb/2P |
Ring Tongue Copper Tubing Terminal, 1.54 in L, 0.57 in W, Tin Plated, 3/8" Stud, 600 Volts Max., 105 Deg C Max | |
Renesas Technology Corp |
R7F0C903-908 |
1Mb/99P |
True Low Power Platform (as low as 66 µA/MHz, and 0.57 µA for LVD), 1.6 V to 5.5 V operation, 16 to 48 Kbyte Flash, 31 DMIPS at 24 MHz, for General Purpose Applications Jun 05, 2014 |
R5F10E8AALA |
965Kb/79P |
Combines Multi-channel 12-Bit A/D Converter, True Low Power Platform (as low as 66 關A/MHz, and 0.57 關A for RTC + LVD), 1.6 V to 3.6 V operation, 16 to 64 Kbyte Flash, 41 DMIPS at 32 MHz | |
RL78 |
3Mb/207P |
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz Rev.3.50 |
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