| Fabricant | No de pièce | Fiches technique | Description |
Siemens Semiconductor G...
|
TLE4214G |
371Kb/16P |
Intelligent Double Low-Side Switch 2 x 0.5 A |
| TCA705 |
357Kb/13P |
IC for inductive Proximity Switches with 0.5 A Output Stage |
| 6ES7194-6GA00-0AA0 |
158Kb/1P |
SIMATIC DP, PROFINET Mounting rail for ET 200ECO PN Length 0.5 m
7/4/2022 |
| 6ES7143-5AH00-0BA0 |
195Kb/3P |
SIMATIC ET 200AL, DIQ 16x24 V DC/0.5 A, 8xM12, Degree of protection IP67
7/8/2022 |
| 6ES7143-5BF00-0BA0 |
191Kb/3P |
SIMATIC ET 200AL, DIQ 4+DQ 4x 24 V DC/0.5 A, 8XM8, Degree of protection IP67
7/9/2022 |
| 6ES7143-5AF00-0BA0 |
188Kb/3P |
SIMATIC ET 200AL, DIQ 4+DQ 4x 24 V DC/0.5 A, 4x M12, Degree of protection IP67
7/9/2022 |
| BFR181W |
56Kb/7P |
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) |
| BFS481 |
53Kb/6P |
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA) |
| BFR181 |
57Kb/7P |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) |
| BFP81 |
59Kb/7P |
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.) |
| BFR92P |
57Kb/7P |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
| BFR92W |
57Kb/7P |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
| 6ES7142-6BG00-0BB0 |
231Kb/4P |
SIMATIC ET 200eco PN, DQ 8x 24 V DC/0.5 A, M12-L, 8x M12, single and double assignment, source output (PNP,switching to P potential), substitute value output, channel diagnostics for wire break and short-circuit at the output, shared device
6/15/2023 |
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