Fabricant | No de pièce | Fiches technique | Description |
Mitsubishi Electric Sem...
|
FS4KM-12A |
67Kb/4P |
HIGH-SPEED SWITCHING USE(10V DRIVE,VDSS-600V,rDS (ON) (MAX)-2.4廓,ID-4A) |
Hongfa Technology
|
HFD23 |
60Kb/3P |
Max. 4A switching capability |
Inchange Semiconductor ...
|
4N65 |
136Kb/2P |
Drain Current ID= 4A@ TC=25C |
Microsemi Corporation
|
APT4F120K |
204Kb/4P |
1200V, 4A, 4.2廓 Max Trr ??95nS |
APT4F120K |
188Kb/4P |
N-Channel FREDFET 1200V, 4A, 4.60廓 Max, |
Sanyo Semicon Device
|
STK390-120 |
78Kb/4P |
1-Channel + Supply Switching Convergence Correction Circuit(Ic max=4A) |
SeCoS Halbleitertechnol...
|
SSRF4N60 |
465Kb/4P |
4A , 600 V , RDS(ON) 2.4 N-Channel Enhancement Mode Power MOSFET |
International Rectifier
|
IRF7457 |
120Kb/8P |
Power MOSFET(Vdss=20V, Rds(on)max=7.0mohm, Id=15A) |
IRF7459 |
112Kb/8P |
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=12A) |
IRF840A |
89Kb/8P |
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) |
IRFB23N15D |
139Kb/11P |
Power MOSFET(Vdss=150V, Rds(on)max=0.090ohm, Id=23A) |
IRFB33N15D |
139Kb/11P |
Power MOSFET(Vdss=150V, Rds(on)max=0.056ohm, Id=33A) |
IRFB38N20D |
133Kb/11P |
Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A) |
IRFBA90N20D |
98Kb/8P |
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A?? |
IRFIB7N50A |
96Kb/8P |
Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A) |
IRFP460A |
95Kb/8P |
Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A) |
IRFPS37N50A |
115Kb/8P |
Power MOSFET(Vdss=500V, Rds(on)max=0.13ohm, Id=36A) |
IRF7470 |
119Kb/8P |
Power MOSFET(Vdss=40V, Rds(on)max=13mohm, Id=10A) |
IRFB11N50A |
100Kb/8P |
Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=11A) |
IRFR13N20D |
181Kb/10P |
Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A) |